2SD Transistor Datasheet pdf, 2SD Equivalent. Parameters and Characteristics. 2SD NPN SILICON TRANSISTOR. UNISONIC TECHNOLOGIES CO., LTD. 2 of 3 QW-RG. ▫ ABSOLUTE MAXIMUM. Power Transistor (80V, 1A). 2SD / 2SD / 2SDS / 2SD ○ Features. 1) High VCEO, VCEO=80V. 2) High IC, IC=1A (DC). 3) Good hFE linearity.
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Packaging type SST3 Marking. ROHM shall hav no rsponsibility whatsovr for any disput arising out of th us of such tchnical information.
Valu 80V I C. NPN transistors Applications Audio, general purpose switching and amplifier transistors Description The devices are manufactured in Planar technology with More information. It is intended for telecommunications. Small Signal Switching Transistor. Th priphral conditions must b takn into account whn dsigning circuits for mass production. Emitter Current 10 0. This device is specifically designed More information. Circuit diagram 9 8 N. General description NPN general-purpose transistors in small plastic packages.
Product data sheet Supersedes data of Jan Please v isit our website for pricing and availability at www. Sourced from Process I C  Fig.
Bfor you us our Products, plas contact our sals rprsntativ and vrify th latst spcifications: Therefore, in order to prevent personal injury or fire arising from failure, please take safety measures such as complying with the derating characteristics, implementing redundant and fire prevention designs, and utilizing backups and fail-safe procedures.
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NPN transistors Applications Audio, general purpose switching and amplifier transistors Description The devices are manufactured in Planar technology dattasheet. They are designed for high speed More information.
2SD Datasheet(PDF) – Rohm
Thrfor, in datashet to prvnt prsonal injury or fir arising from failur, plas tak safty masurs such as complying with th drating charactristics, implmnting rdundant 2zd1898 fir prvntion dsigns, and utilizing backups and fail-saf procdurs. C 3,4 Features Low surge, low. ROHM shall have no responsibility for any damages or losses resulting non-compliance with any applicable laws or regulations.
The peripheral conditions must be taken into account when designing circuits for mass production. Filter bandwidth More information. This Datasheet is presented by the m anufacturer. Designed for use in general purpose power amplifier and switching applications. V CE [V] Fig. Thank you for your accessing to ROHM product informations. Mor dtail product informations and catalogs ar availabl, plas contact us.
IC [A] 2SD 10ms 1 0. High voltage fast-switching NPN dwtasheet transistor Datasheet production data Features Low spread of dynamic parameters Minimum lot-to-lot spread for reliable operation Very high switching speed Applications. ROHM shall hav no rsponsibility for any damags or losss rsulting non-complianc with any applicabl laws or rgulations.
They are designed for high speed. Product specification Supersedes data of May Low voltage Datasheeet power transistor. C 3,4 Features Low surge, low More information.
2SD Datasheet(PDF) – SeCoS Halbleitertechnologie GmbH
Th Products ar intndd for us in gnral lctronic quipmnt i. Do not us our Products in applications rquiring xtrmly high rliability, such as arospac quipmnt, nuclar powr control systms, and submarin rpatrs. NPN general-purpose transistors in small plastic packages. Collector Current II Fig. Low voltage NPN power Darlington transistor. Collctor Currnt I Fig. General description PNP general-purpose transistors. F Notice Notes 1 The information contained herein is subject to change without notice.
ROHM shall have no responsibility whatsoever for any dispute arising out of the use of such technical information. Product specification Supersedes data of Feb It is intended for telecommunications More information. The AT- is housed in. It’s a community-based project which helps to repair anything. More detail product informations and catalogs are available, please contact us.